Molecular Beam Epitaxy of II-VI Based Heterostructures

Molecular Beam Epitaxy of Ii-vi Compound Waveguides

IConllnv on r...r.. •Idm II n.c....ry and Idtnllly by block numb.r) Thin films ot ZnSe, ZnTe, Zn(SeTe), Cd(SeTe) and CdTe were grown on CdS, CdSe, CaF,, and sapphire substrates by evaporation of the elements under ultra-high vacuum. Substrate chemical polishing techniques were developed:. Elemental and compound evaporation and deposition rates were measured by mass spectrometer, film thickness,...

Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowires.

Semiconductor nanowires have stimulated extensive interest in the last decade because of their potential use as building blocks in future generations of electronic and optoelectronic applications. Equally important, their singular geometry provides an opportunity to test fundamental quantum mechanical concepts and related phenomena. Even though significant advances have been made in the synthes...

Ad-774 126 Molecular Beam Epitaxy of Ii-vi Compound Waveguides

High-brightness II–VI light-emitting diodes grown by molecular-beam epitaxy on ZnSe substrates

High-brightness blue and green light-emitting diodes ~LEDs! based on II–VI double heterostructures ~DHs! have been successfully grown by molecular-beam epitaxy ~MBE! on ~100! ZnSe substrates. These LED structures consist of a 500–1000 Å thick active region of undoped blue-emitting Zn0.9Cd0.1Se/ZnSe multiple quantum wells or a green-emitting ZnTe0.1Se0.9 single quantum well sandwiched between a ...

Molecular Beam Epitaxy of InP-based Heterostructures on Silicon Substrates and Membranes

Generally, there are three hurdles for successful epitaxial growth of III-V materials on silicon: differences in lattice constants, thermal expansion coefficients, and lattice polarity (i.e. polar vs. non-polar). These differences yield a high density of threading dislocations and antiphase domains in the epitaxial films, which drastically reduce the efficiencies and lifetimes of devices made i...